Infineon BSC034N06NS 30V N-Channel MOSFET Datasheet and Application Review

The Infineon BSC034N06NS is a highly efficient N-channel MOSFET designed using OptiMOS™ technology, offering an optimal blend of low on-state resistance and high switching performance. With a 30V drain-source voltage (VDS) rating, this MOSFET is particularly suited for low-voltage, high-current applications, making it a popular choice in modern power electronics.

A key highlight of the BSC034N06NS is its exceptionally low on-resistance (RDS(on)), which is typically 3.4 mΩ at 10V gate-source voltage. This low resistance minimizes conduction losses, leading to improved thermal performance and higher overall system efficiency. The device is also characterized by its fast switching capabilities, reducing switching losses in high-frequency circuits—a critical advantage in switch-mode power supplies (SMPS), motor control systems, and synchronous rectification.

The MOSFET is housed in a SuperSO8 package, which offers improved thermal conductivity and power dissipation in a compact form factor. This makes it suitable for space-constrained applications such as server power supplies, battery management systems (BMS), and DC-DC converters.

In terms of protection and reliability, the BSC034N06NS features a low gate charge (Qg) and robust body diode, enhancing its performance in freewheeling and inductive load applications. Its high current handling capability—up to 40A continuous drain current—further establishes it as a reliable component for demanding environments.

ICGOOODFIND:

The Infineon BSC034N06NS stands out for its low RDS(on), high efficiency, and robust performance in a variety of power management applications. Its combination of thermal efficiency and compact packaging makes it an excellent choice for designers seeking to optimize both size and performance in low-voltage systems.

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Keywords:

OptiMOS, Low RDS(on), SuperSO8, Synchronous Rectification, High Efficiency