Infineon IAUT150N10S5N035ATMA1 100V OptiMOS 5 Power MOSFET for High-Efficiency Automotive Applications

The relentless drive towards vehicle electrification demands power semiconductors that deliver exceptional efficiency, reliability, and performance. At the forefront of this technological evolution is Infineon Technologies' IAUT150N10S5N035ATMA1, a 100V N-channel power MOSFET from the groundbreaking OptiMOS™ 5 automotive platform. This device is engineered specifically to meet the rigorous demands of modern automotive systems, setting a new benchmark for power switching.

A key strength of the IAUT150N10S5N035ATMA1 lies in its superior switching performance and minimal losses. Built on an advanced trench technology, this MOSFET boasts an exceptionally low on-state resistance (RDS(on)) of just 1.5 mΩ (max). This ultra-low resistance directly translates into reduced conduction losses, enabling higher efficiency across a wide range of operating conditions. Whether in a 48V mild-hybrid starter-generator, a DC-DC converter, or an electric power steering system, this efficiency gain is critical for minimizing heat generation and maximizing overall system energy savings, which is paramount for extending electric vehicle range.

Beyond raw performance, the device is designed for the harsh environment under the hood. It fulfills the stringent AEC-Q101 qualification standard, guaranteeing its robustness and longevity for automotive applications. It is capable of operating reliably at high junction temperatures, a necessity in the confined and hot spaces of an engine compartment. Furthermore, its high avalanche ruggedness and excellent reverse recovery characteristics ensure stable and safe operation under stressful conditions, including voltage transients and inductive load switching.

The IAUT150N10S5N035ATMA1 also features a lead-free (Pb-free) and halogen-free package, aligning with global environmental regulations. The low gate charge (Qg) of the OptiMOS™ 5 technology simplifies gate drive design, allowing for faster switching frequencies and, consequently, the use of smaller passive components. This contributes to a more compact and lighter overall system design—a crucial factor in automotive engineering.

In conclusion, the Infineon IAUT150N10S5N035ATMA1 is more than just a component; it is a pivotal enabler for the next generation of automotive electronics. By offering an optimal blend of the lowest losses, highest power density, and unwavering automotive-grade reliability, it empowers engineers to create systems that are more efficient, more compact, and more powerful.

ICGOODFIND: This Infineon OptiMOS™ 5 MOSFET is a top-tier solution for engineers designing high-performance, high-reliability automotive power systems, particularly in 48V MHEV and high-current motor control applications, where its ultra-low RDS(on) and proven robustness provide a significant competitive advantage.

Keywords: OptiMOS™ 5, Automotive Grade (AEC-Q101), Low RDS(on), High Efficiency, Power Density.