Infineon IPB60R160C6 CoolMOS™ Power Transistor: Key Features and Application Advantages
The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this innovation is Infineon's CoolMOS™ family, with the IPB60R160C6 standing out as a prime example of a high-performance Power Transistor engineered for demanding applications. This superjunction MOSFET (MOSFET) sets a high benchmark by masterfully balancing low switching losses and superior conduction behavior.
Key Features of the IPB60R160C6
The IPB60R160C6 is designed to deliver exceptional performance, encapsulated in its key technical characteristics:
Ultra-Low On-Resistance: With a maximum RDS(on) of just 160 mΩ at a gate-source voltage of 10 V, this device minimizes conduction losses. This translates directly into higher efficiency, as less power is dissipated as heat during the on-state.
High Voltage Rating: It boasts a drain-source voltage (VDS) rating of 650 V, making it exceptionally robust and suitable for operation from universal input mains (85 V AC to 265 V AC) and in circuits with high-voltage spikes.
Exceptional Switching Performance: The cornerstone of the CoolMOS™ technology is its drastically reduced figure of merit (RDS(on) x Qg). The IPB60R160C6 features low gate charge (Qg) and low effective output capacitance (Coss(eff)), enabling very fast switching transitions. This reduces switching losses significantly, allowing for higher switching frequencies.
Improved Body Diode Robustness: The intrinsic body diode of this MOSFET is optimized for higher dv/dt capability and softer reverse recovery characteristics. This enhances reliability in bridge circuits (like PFC or inverters) where the body diode is forced into conduction.
TO-263 (D2PAK) Package: This industry-standard surface-mount (SMD) package offers an excellent trade-off between power handling capability and board space, providing good thermal performance for heat dissipation.
Application Advantages
The combination of these features provides tangible benefits across a wide spectrum of power conversion topologies:
1. Switched-Mode Power Supplies (SMPS): In applications like server power supplies, telecom rectifiers, and industrial power units, the IPB60R160C6 enables designers to achieve higher efficiency ratings (e.g., 80 Plus Titanium). The reduced losses allow for either a smaller heatsink or a higher power output within the same form factor, increasing power density.
2. Power Factor Correction (PFC): This MOSFET is an ideal choice for both interleaved and single-phase boost PFC stages. Its fast switching speed and robust body diode ensure efficient operation and reliable performance at frequencies that allow for smaller, more cost-effective magnetic components.
3. Lighting and Motor Control: In high-efficiency LED lighting drivers and inverter stages for motor control systems, the low RDS(on) ensures minimal voltage drop and heat generation, contributing to longer system lifespan and reduced cooling requirements.
4. Renewable Energy Systems: For inverters used in solar and other renewable energy applications, maximizing efficiency is paramount to harvesting every possible watt of energy. The low losses of the IPB60R160C6 directly contribute to a higher overall system efficiency.
ICGOODFIND Summary
The Infineon IPB60R160C6 CoolMOS™ Power Transistor is a high-efficiency, high-reliability solution that addresses the core challenges of modern power supply design. Its optimal blend of ultra-low on-resistance, fast switching capability, and 650 V robustness makes it a superior choice for engineers aiming to push the boundaries of power density and energy efficiency in applications ranging from industrial SMPS and PFC circuits to renewable energy systems.
Keywords:
1. CoolMOS™
2. High Efficiency
3. Low RDS(on)
4. Fast Switching
5. 650 V Rating
